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UB and UBC 3-SMD No Lead
Discrete Semiconductor Products

2N2907AUBC

Active
Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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UB and UBC 3-SMD No Lead
Discrete Semiconductor Products

2N2907AUBC

Active
Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N2907AUBC
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]500 mW
Supplier Device PackageUBC
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 24.87
Microchip DirectN/A 1$ 26.78
NewarkEach 100$ 24.87
500$ 23.91

Description

General part information

2N2907AUBC-Transistor Series

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources

No documents available