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8-Power VDFN
Discrete Semiconductor Products

PXN6R7-30QLJ

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Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

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8-Power VDFN
Discrete Semiconductor Products

PXN6R7-30QLJ

Active
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPXN6R7-30QLJ
Current - Continuous Drain (Id) @ 25°C12.7 A, 62 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1150 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1.7 W, 40.3 W
Rds On (Max) @ Id, Vgs [Max]6.7 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.62
10$ 0.53
25$ 0.50
100$ 0.40
250$ 0.37
500$ 0.31
1000$ 0.24
Digi-Reel® 1$ 0.62
10$ 0.53
25$ 0.50
100$ 0.40
250$ 0.37
500$ 0.31
1000$ 0.24
N/A 0$ 0.57
Tape & Reel (TR) 3000$ 0.22
6000$ 0.21
15000$ 0.19
30000$ 0.18

Description

General part information

PXN6R7-30QL Series

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.