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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | Surface Mount | 1150 pF | MOSFET (Metal Oxide) | 2.2 V | 6.7 mOhm | N-Channel | MLPAK33 | 24.8 nC | 1.7 W 40.3 W | 30 V | 150 °C | -55 °C | 8-PowerVDFN | 12.7 A 62 A | 4.5 V 10 V |