
Discrete Semiconductor Products
PMXB350UPEZ
ActiveFreescale Semiconductor - NXP
POWER MOSFET, P CHANNEL, 20 V, 1.2 A, 0.35 OHM, DFN1010D, SURFACE MOUNT
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Discrete Semiconductor Products
PMXB350UPEZ
ActiveFreescale Semiconductor - NXP
POWER MOSFET, P CHANNEL, 20 V, 1.2 A, 0.35 OHM, DFN1010D, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | PMXB350UPEZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.2 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 2.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 116 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XDFN Exposed Pad |
| Power Dissipation (Max) | 5.68 W, 360 mW |
| Rds On (Max) @ Id, Vgs | 447 mOhm |
| Supplier Device Package | DFN1010D-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PMXB350UPE Series
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources