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Nexperia-PMXB75UPEZ MOSFETs Trans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R
Discrete Semiconductor Products

PMXB350UPEZ

Active
Freescale Semiconductor - NXP

POWER MOSFET, P CHANNEL, 20 V, 1.2 A, 0.35 OHM, DFN1010D, SURFACE MOUNT

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Nexperia-PMXB75UPEZ MOSFETs Trans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R
Discrete Semiconductor Products

PMXB350UPEZ

Active
Freescale Semiconductor - NXP

POWER MOSFET, P CHANNEL, 20 V, 1.2 A, 0.35 OHM, DFN1010D, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMXB350UPEZ
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.2 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2.3 nC
Input Capacitance (Ciss) (Max) @ Vds116 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XDFN Exposed Pad
Power Dissipation (Max)5.68 W, 360 mW
Rds On (Max) @ Id, Vgs447 mOhm
Supplier Device PackageDFN1010D-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1761$ 0.06
DigikeyCut Tape (CT) 1$ 0.41
10$ 0.29
100$ 0.15
500$ 0.13
1000$ 0.10
2000$ 0.09
Digi-Reel® 1$ 0.41
10$ 0.29
100$ 0.15
500$ 0.13
1000$ 0.10
2000$ 0.09
Tape & Reel (TR) 5000$ 0.09
10000$ 0.08
25000$ 0.08
50000$ 0.07
125000$ 0.06

Description

General part information

PMXB350UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.