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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | DFN1010D-3 | 8 V | 5.68 W 360 mW | 447 mOhm | 116 pF | 1.2 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2.3 nC | 950 mV | 3-XDFN Exposed Pad | Surface Mount | P-Channel | 20 V | 1.2 V 4.5 V |