Discrete Semiconductor Products

STFI14N80K5

Obsolete

MOSFET N-CH 800V 12A I2PAKFP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 12A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI14N80K5

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Rds On (Max) @ Id, Vgs	445 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Technology
STMicroelectronics STFI14N80K5	800 V	30 V	N-Channel	12 A	10 V	5 V	445 mOhm	Through Hole	620 pF	150 °C	-55 °C	22 nC	TO-281 (I2PAKFP)	TO-262-3 Full Pack I2PAK	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.45

General part information

N-Channel 800 V 12A (Tc) 30W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources