Specification	MJE5852

Current - Collector (Ic) (Max) [Max]	8 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	5 V
Voltage - Collector Emitter Breakdown (Max)	400 V

MJE5852 Series

8.0 A, 400 V PNP Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
ON Semiconductor MJE5852	400 V	PNP	80 W	TO-220-3	5 V	8 A	Through Hole	5 hFE	150 °C	-65 °C	TO-220

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJE5852 Series

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

Documents

Technical documentation and resources

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing