MJE5852 Series

8.0 A, 400 V PNP Bipolar Power Transistor

Catalog

8.0 A, 400 V PNP Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
ON Semiconductor MJE5852	400 V	PNP	80 W	TO-220-3	5 V	8 A	Through Hole	5 hFE	150 °C	-65 °C	TO-220

Catalog

8.0 A, 400 V PNP Bipolar Power Transistor

Key Features

• Pb-Free Packages are Available

Description

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.