STF7N60M2
ActiveN-CHANNEL 600 V, 0.86 OHM TYP., 5 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE
STF7N60M2
ActiveN-CHANNEL 600 V, 0.86 OHM TYP., 5 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STF7N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 271 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs | 950 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
STF7N60M2 Series
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
| Part | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 25 V | 20 W | 4 V | MOSFET (Metal Oxide) | 950 mOhm | 271 pF | 8.8 nC | N-Channel | 10 V | 150 °C | -55 °C | Through Hole | TO-220FP | 5 A | 600 V | TO-220-3 Full Pack |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1900 | $ 1.74 | |
Description
General part information
STF7N60M2 Series
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources