Specification	NVH4L040N120SC1

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	106 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1762 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	319 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	56 mOhm
Supplier Device Package	TO-247-4L
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-15 V
Vgs(th) (Max) @ Id	4.3 V

NVH4L040N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L

Part	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Qualification	Mounting Type	Grade	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)
ON Semiconductor NVH4L040N120SC1	1200 V	N-Channel	-55 °C	175 ░C	1762 pF	-15 V	25 V	TO-247-4	106 nC	56 mOhm	58 A	4.3 V	AEC-Q101	Through Hole	Automotive	TO-247-4L	319 W
ON Semiconductor NVH4L040N65S3F	650 V	N-Channel	-55 °C	150 °C	5665 pF			TO-247-4		40 mOhm	65 A	5 V	AEC-Q101	Through Hole	Automotive	TO-247-4L	446 W	160 nC	MOSFET (Metal Oxide)	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 17.74
		30	$ 16.18
Newark	Each	1	$ 29.04
		5	$ 28.33
		10	$ 28.01
		25	$ 27.24
		50	$ 26.49
ON Semiconductor	N/A	1	$ 14.88

Description

General part information

NVH4L040N120SC1 Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

NVH4L040N120SC1

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Technical Specifications

NVH4L040N120SC1 Series

Pricing

Description

NVH4L040N120SC1 Series

Documents

Datasheet

Package Drawing-340CJ-TO-247-4LD

Datasheet

Product Change Notice EN

NVH4L040N120SC1 Series