NVH4L040N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L

Part	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Qualification	Mounting Type	Grade	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)
ON Semiconductor NVH4L040N120SC1	1200 V	N-Channel	-55 °C	175 ░C	1762 pF	-15 V	25 V	TO-247-4	106 nC	56 mOhm	58 A	4.3 V	AEC-Q101	Through Hole	Automotive	TO-247-4L	319 W
ON Semiconductor NVH4L040N65S3F	650 V	N-Channel	-55 °C	150 °C	5665 pF			TO-247-4		40 mOhm	65 A	5 V	AEC-Q101	Through Hole	Automotive	TO-247-4L	446 W	160 nC	MOSFET (Metal Oxide)	30 V

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L

Key Features

• Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A

• Qualified for Automotive According to AEC−Q101

• High Speed Switching and Low Capacitance

• Devices are Pb−Free and are RoHS Compliant

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability