FFSD1065A
ActiveSILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 10 A, 650 V, D1, DPAK SILICON CARBIDE (SIC) SCHOTTK… MORE
Deep-Dive with AI
Search across all available documentation for this part.
FFSD1065A
ActiveSILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 10 A, 650 V, D1, DPAK SILICON CARBIDE (SIC) SCHOTTK… MORE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FFSD1065A |
|---|---|
| Capacitance @ Vr, F | 575 pF |
| Current - Average Rectified (Io) | 18 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.39 | |
| 10 | $ 2.85 | |||
| 100 | $ 2.30 | |||
| 500 | $ 2.05 | |||
| 1000 | $ 1.75 | |||
| Digi-Reel® | 1 | $ 3.39 | ||
| 10 | $ 2.85 | |||
| 100 | $ 2.30 | |||
| 500 | $ 2.05 | |||
| 1000 | $ 1.75 | |||
| Tape & Reel (TR) | 2500 | $ 1.65 | ||
| 5000 | $ 1.58 | |||
| Newark | Each | 500 | $ 1.69 | |
| ON Semiconductor | N/A | 1 | $ 1.46 | |
Description
General part information
FFSD1065B-F085 Series
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew
Documents
Technical documentation and resources
