FFSD1065B-F085 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK

Part	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type	Qualification	Grade
ON Semiconductor FFSD1065A	0 ns	575 pF	No Recovery Time	18 A	SiC (Silicon Carbide) Schottky	650 V	175 ░C	-55 C	TO-252 (DPAK)	200 µA	1.75 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount
ON Semiconductor FFSD1065B-F085	0 ns	424 pF	No Recovery Time	13.5 A	SiC (Silicon Carbide) Schottky	650 V	175 ░C	-55 C	TO-252 (DPAK)	40 µA	1.7 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	AEC-Q101	Automotive

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK

Key Features

• Max Junction Temperature 175C

• No Reverse Recovery / No Forward Recovery

• Avalanche Rated 49 mJ

• Positive Temperature Coefficient

• AEC-Q101 Qualified and PPAP Capable

• Ease of Paralleling

• High Surge Current Capacity

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew