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SQJQ906EL-T1_GE3

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MOSFET 2N-CH 40V 160A PPAK8X8

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 160A PPAK8X8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJQ906EL-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3238 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 8 x 8 Dual
Power - Max [Max]	187 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	PowerPAK® 8 x 8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Grade	Mounting Type	Qualification	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Configuration	Package / Case	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SQJQ906EL-T1_GE3	45 nC	MOSFET (Metal Oxide)	3238 pF	PowerPAK® 8 x 8 Dual	Automotive	Surface Mount	AEC-Q101	2.5 V	40 V	160 A	-55 °C	175 ░C	187 W	2 N-Channel (Dual)	PowerPAK® 8 x 8 Dual	4.3 mOhm

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General part information

Mosfet Array 40V 160A (Tc) 187W Surface Mount PowerPAK® 8 x 8 Dual

Technical documentation and resources