Discrete Semiconductor Products

STU10N60M2

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 600V 7.5A 3-PIN IPAK TUBE

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DocumentsSTU10N60M2 | Datasheet

Discrete Semiconductor Products

STU10N60M2

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 600V 7.5A 3-PIN IPAK TUBE

Deep-Dive with AI

DocumentsSTU10N60M2 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU10N60M2

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	85 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STU10N60M2 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Vgs (Max)	FET Type	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
STMicroelectronics STU10N60M2	13.5 nC	7.5 A	Through Hole	MOSFET (Metal Oxide)	25 V	N-Channel	85 W	150 °C	-55 °C	400 pF	4 V	600 V	600 mOhm	IPAK	TO-251	10 V	IPAK TO-251-3 Short Leads TO-251AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	59	$ 1.89
Mouser	N/A	1	$ 1.36
		10	$ 1.14
		500	$ 0.96
		1000	$ 0.78
		3000	$ 0.74
		6000	$ 0.57
		9000	$ 0.56

Description

General part information

STU10N60M2 Series

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.Extremely low gate chargeLower RDS(on)x area vs previous generationLow gate input resistance100% avalanche testedZener-protected

Documents

Technical documentation and resources

STU10N60M2 | Datasheet

Datasheet