Discrete Semiconductor Products

SIHG17N60D-GE3

LTB

MOSFET N-CH 600V 17A TO247AC

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Discrete Semiconductor Products

LTB

MOSFET N-CH 600V 17A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG17N60D-GE3

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	1780 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	277.8 W
Rds On (Max) @ Id, Vgs	340 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHG17N80E-GE3	MOSFET (Metal Oxide)	122 nC	2408 pF	15 A	-55 °C	150 °C	Through Hole	30 V	N-Channel	800 V	4 V	208 W	10 V	TO-247-3	290 mOhm	TO-247AC
Vishay General Semiconductor - Diodes Division SIHG17N60D-GE3	MOSFET (Metal Oxide)		1780 pF	17 A	-55 °C	150 °C	Through Hole	30 V	N-Channel	600 V	5 V		10 V	TO-247-3	340 mOhm	TO-247AC	277.8 W	90 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 2.29

General part information

N-Channel 600 V 17A (Tc) 277.8W (Tc) Through Hole TO-247AC

Technical documentation and resources