SIHG17 Series

Catalog

MOSFET N-CH 800V 15A TO247AC

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHG17N80E-GE3	MOSFET (Metal Oxide)	122 nC	2408 pF	15 A	-55 °C	150 °C	Through Hole	30 V	N-Channel	800 V	4 V	208 W	10 V	TO-247-3	290 mOhm	TO-247AC
Vishay General Semiconductor - Diodes Division SIHG17N60D-GE3	MOSFET (Metal Oxide)		1780 pF	17 A	-55 °C	150 °C	Through Hole	30 V	N-Channel	600 V	5 V		10 V	TO-247-3	340 mOhm	TO-247AC	277.8 W	90 nC