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Discrete Semiconductor Products

NSS60101DMTTBG

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ON Semiconductor

DUAL 60V 1A LOW V<SUB>CE(SAT)</SUB> NPN TRANSISTORS IN WDFN6

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Axial
Discrete Semiconductor Products

NSS60101DMTTBG

Active
ON Semiconductor

DUAL 60V 1A LOW V<SUB>CE(SAT)</SUB> NPN TRANSISTORS IN WDFN6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNSS60101DMTTBG
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120 hFE
Frequency - Transition180 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power - Max [Max]2.27 W
Supplier Device Package6-WDFN (2x2)
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic180 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
1000$ 0.24
Digi-Reel® 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
1000$ 0.24
Tape & Reel (TR) 3000$ 0.22
6000$ 0.21
9000$ 0.19
30000$ 0.19
NewarkEach (Supplied on Full Reel) 3000$ 0.24
6000$ 0.23
12000$ 0.21
18000$ 0.20
30000$ 0.19
ON SemiconductorN/A 1$ 0.19

Description

General part information

NSS60101DMT Series

ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability in a small form factor, 2x2mm plastic leadless package. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.