NSS60101DMT Series

Dual 60V 1A Low VCE(sat) NPN Transistors in WDFN6

Catalog

Dual 60V 1A Low VCE(sat) NPN Transistors in WDFN6

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor NSS60101DMTTBG	1 A	2 NPN (Dual)	6-WDFN (2x2)	-55 °C	150 °C	60 V	180 MHz	2.27 W	180 mV	Surface Mount	100 nA	120 hFE

Catalog

Dual 60V 1A Low VCE(sat) NPN Transistors in WDFN6

Key Features

• 1A IDC, 2A ICM

• Low VCE(sat): 0.115V @ 1A IC, IC/IB= 10

• NSV60101DMTWTBG - Wettable Flanks Packaged Device

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

• Beta of 180 @ 1ADC, VCE= 2V

Description

ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability in a small form factor, 2x2mm plastic leadless package. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.