Specification	EMT1DXV6T5G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	500 mW
Supplier Device Package	SOT-563
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

EMT%20SERIES Series

Dual PNP Bipolar Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power - Max [Max]
ON Semiconductor EMT1DXV6T1	60 V	100 mA	SOT-563	500 mV	2 PNP (Dual)	140 MHz	500 nA	SOT-563 SOT-666	120	-55 °C	150 °C	Surface Mount	500 mW
ON Semiconductor EMT1DXV6T5G	60 V	100 mA	SOT-563	500 mV	2 PNP (Dual)	140 MHz	500 nA	SOT-563 SOT-666	120	-55 °C	150 °C	Surface Mount	500 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.48
		10	$ 0.34
	Digi-Reel®	1	$ 0.40
		10	$ 0.24

Description

General part information

EMT%20SERIES Series

The Dual PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT¿563 which is designed for low power surface mount applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-463A-01-SOT-563-6 1.60x1.20x0.55, 0.50P

Package Drawing