Technical Specifications
Parameters and characteristics for this part
| Specification | EMT1DXV6T1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 140 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | SOT-563 |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
EMT%20SERIES Series
The Dual PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT¿563 which is designed for low power surface mount applications.
Documents
Technical documentation and resources