Discrete Semiconductor Products

SI8487DB-T1-E1

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MOSFET P-CH 30V 4MICROFOOT

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Discrete Semiconductor Products

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MOSFET P-CH 30V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8487DB-T1-E1

Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	2240 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-UFBGA
Power Dissipation (Max)	2.7 W, 1.1 W
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type
Vishay General Semiconductor - Diodes Division SI8487DB-T1-E1	1.1 W 2.7 W	31 mOhm	80 nC	10 V	2.5 V	-55 °C	150 °C	2240 pF	12 V	1.2 V	4-Microfoot	Surface Mount	4-UFBGA	MOSFET (Metal Oxide)	4.9 A	30 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 4.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources