SI8487 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 4MICROFOOT
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.1 W 2.7 W | 31 mOhm | 80 nC | 10 V | 2.5 V | -55 °C | 150 °C | 2240 pF | 12 V | 1.2 V | 4-Microfoot | Surface Mount | 4-UFBGA | MOSFET (Metal Oxide) | 4.9 A | 30 V | P-Channel |