
RMLV0416EGBG-4S2#AC0
Active4MB ADVANCED LPSRAM (256-KWORD × 16-BIT)
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RMLV0416EGBG-4S2#AC0
Active4MB ADVANCED LPSRAM (256-KWORD × 16-BIT)
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Technical Specifications
Parameters and characteristics for this part
| Specification | RMLV0416EGBG-4S2#AC0 |
|---|---|
| Access Time | 45 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA |
| Supplier Device Package [x] | 7.5 |
| Supplier Device Package [y] | 8.5 |
| Technology | SRAM |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page [custom] | 45 ns |
| Write Cycle Time - Word, Page [custom] | 45 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RMLV0416E Series
The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array.
Documents
Technical documentation and resources