
RMLV0416EGSB-4S2#AA0
UnknownIC SRAM 4MBIT PARALLEL 44TSOP II
Deep-Dive with AI
Search across all available documentation for this part.

RMLV0416EGSB-4S2#AA0
UnknownIC SRAM 4MBIT PARALLEL 44TSOP II
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RMLV0416EGSB-4S2#AA0 |
|---|---|
| Access Time | 45 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10.16 mm |
| Package / Case | 10.16 mm |
| Package / Case | 44-TSOP |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page [custom] | 45 ns |
| Write Cycle Time - Word, Page [custom] | 45 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
RMLV0416E Series
The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array.
Documents
Technical documentation and resources