Discrete Semiconductor Products

PDTC115EEF,115

Obsolete

TRANS PREBIAS NPN 50V SC89

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 50V SC89

Technical Specifications

Parameters and characteristics for this part

Specification	PDTC115EEF,115

Current - Collector (Ic) (Max)	20 mA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min)	80
Mounting Type	Surface Mount
Package / Case	SOT-490, SC-89
Package Name	SC-89
Power - Max	250 mW
Resistor - Base (R1) Resistance	100 kOhm
Resistor - Emitter Base (R2)	100 kOhms
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	150 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

Part	Power - Max	Current - Collector (Ic) (Max)	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) Resistance	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Mounting Type	Vce Saturation (Max)	Package / Case	Package Name	Resistor - Emitter Base (R2)
NXP USA Inc. PDTC115TE,115	150 mW	0.1 mA	NPN Pre-Biased	50 V	100 kOhm	100	1 µA	Surface Mount	150 mV	SC-75 SOT-416	SC-75
NXP USA Inc. PDTC115TK,115	250 mW	0.1 mA	NPN Pre-Biased	50 V	100 kOhm	100	1 µA	Surface Mount	150 mV	SC-59 SOT-23-3 TO-236-3	SMT3; MPAK
NXP USA Inc. PDTC115EEF,115	250 mW	20 mA	NPN Pre-Biased	50 V	100 kOhm	80	1 µA	Surface Mount	150 mV	SC-89 SOT-490	SC-89	100 kOhms
NXP USA Inc. PDTC115EE,115	150 mW	20 mA	NPN Pre-Biased	50 V	100 kOhm	80	1 µA	Surface Mount	150 mV	SC-75 SOT-416	SC-75	100 kOhms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 20 mA 250 mW Surface Mount SC-89

Technical documentation and resources