
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | PDTC115TE,115 |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) | 100 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-416, SC-75 |
| Package Name | SC-75 |
| Power - Max | 150 mW |
| Resistor - Base (R1) Resistance | 100 kOhm |
| Transistor Type | Pre-Biased, NPN |
| Vce Saturation (Max) | 150 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
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Description
General part information
PDTC115 Series
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount SC-75
Documents
Technical documentation and resources