Specification	FDMS86102LZ

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 69 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDMS86102LZ Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 22A, 25mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Technology	Mounting Type
ON Semiconductor FDMS86102LZ	4.5 V 10 V	-55 °C	150 °C	2.5 W 69 W	20 V	8-PowerTDFN	1305 pF	2.5 V	22 nC	100 V	8-PQFN (5x6)	25 mOhm	N-Channel	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.74
		10	$ 1.77
		100	$ 1.22
		500	$ 0.98
		1000	$ 0.91
	Digi-Reel®	1	$ 2.74
		10	$ 1.77
		100	$ 1.22
		500	$ 0.98
		1000	$ 0.91
	Tape & Reel (TR)	3000	$ 0.84
Newark	Each (Supplied on Full Reel)	3000	$ 1.06
		6000	$ 1.01
		12000	$ 0.90
		18000	$ 0.87
		30000	$ 0.84
ON Semiconductor	N/A	1	$ 0.77

Description

General part information

FDMS86102LZ Series

This N-Channel logic Level MOSFETs are produced using an advanced PowerTrench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.