Discrete Semiconductor Products

NP29N06QDK-E1-AY

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MOSFET 2N-CH 60V 30A 8HSON

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 30A 8HSON

Technical Specifications

Parameters and characteristics for this part

Specification	NP29N06QDK-E1-AY

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	24 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerLDFN
Power - Max	44 W, 1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-HSON (5x5.4)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature	Power - Max	Package / Case	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Qualification	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Grade	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation NP29N04QUK-E1-AY	175 °C	1 W 44 W	8-PowerLDFN	MOSFET (Metal Oxide)	8-HSON (5x5.4)	10.1 mOhm	Surface Mount	AEC-Q101	40 V	1500 pF	2 N-Channel (Dual)	30 A	Automotive	4 V	29 nC
Renesas Electronics Corporation NP29N06QDK-E1-AY	175 °C	1 W 44 W	8-PowerLDFN	MOSFET (Metal Oxide)	8-HSON (5x5.4)		Surface Mount	AEC-Q101	60 V	1500 pF	2 N-Channel (Dual)	30 A	Automotive	2.5 V	24 nC	20 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 30A (Ta) 1W (Ta), 44W (Tc) Surface Mount 8-HSON (5x5.4)

Technical documentation and resources