Discrete Semiconductor Products

NP29N04QUK-E1-AY

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MOSFET 2N-CH 40V 30A 8HSON

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 30A 8HSON

Technical Specifications

Parameters and characteristics for this part

Specification	NP29N04QUK-E1-AY

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	29 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerLDFN
Power - Max	44 W, 1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	10.1 mOhm
Supplier Device Package	8-HSON (5x5.4)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature	Power - Max	Package / Case	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Qualification	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Grade	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation NP29N04QUK-E1-AY	175 °C	1 W 44 W	8-PowerLDFN	MOSFET (Metal Oxide)	8-HSON (5x5.4)	10.1 mOhm	Surface Mount	AEC-Q101	40 V	1500 pF	2 N-Channel (Dual)	30 A	Automotive	4 V	29 nC
Renesas Electronics Corporation NP29N06QDK-E1-AY	175 °C	1 W 44 W	8-PowerLDFN	MOSFET (Metal Oxide)	8-HSON (5x5.4)		Surface Mount	AEC-Q101	60 V	1500 pF	2 N-Channel (Dual)	30 A	Automotive	2.5 V	24 nC	20 mOhm

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General part information

Mosfet Array 40V 30A (Tc) 1W (Ta), 44W (Tc) Surface Mount 8-HSON (5x5.4)

Technical documentation and resources