Specification	FDC640P

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

FDC640P Series

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDC640P	20 V	2.5 V 4.5 V	12 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SuperSOT™-6	890 pF	4.5 A	SOT-23-6 Thin TSOT-23-6	Surface Mount	53 mOhm	P-Channel	1.5 V	13 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.68
		10	$ 0.59
		100	$ 0.41
		500	$ 0.34
		1000	$ 0.29
	Digi-Reel®	1	$ 0.68
		10	$ 0.59
		100	$ 0.41
		500	$ 0.34
		1000	$ 0.29
	Tape & Reel (TR)	3000	$ 0.26
		6000	$ 0.25
		9000	$ 0.23
		30000	$ 0.23
Newark	Each (Supplied on Cut Tape)	1	$ 0.82
		10	$ 0.59
		25	$ 0.53
		50	$ 0.47
		100	$ 0.41
		250	$ 0.36
		500	$ 0.32
		1000	$ 0.29
ON Semiconductor	N/A	1	$ 0.17

Description

General part information

FDC640P Series

This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench®process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).