FDC640P Series

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ

Catalog

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDC640P	20 V	2.5 V 4.5 V	12 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SuperSOT™-6	890 pF	4.5 A	SOT-23-6 Thin TSOT-23-6	Surface Mount	53 mOhm	P-Channel	1.5 V	13 nC

Catalog

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ

Key Features

-4.5 A, -20 V.

• RDS(ON)= 0.053 Ω @ VGS= -4.5 V

• RDS(ON)= 0.080 Ω @ VGS= -2.5 V

• Rugged gate rating ( ±12V)

• Fast switching speed

• High performance trench technology for extremelylow RDS(ON)

Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench®process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).