Discrete Semiconductor Products

RJK1003DPN-A0#T2

Obsolete

N-CHANNEL MOSFET 100 V, 50 A, 11 MΩ

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOSFET 100 V, 50 A, 11 MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1003DPN-A0#T2

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	TO-220ABA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

N-Channel MOSFET 100 V, 50 A, 11 MΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK1003DPN-A0#T2	59 nC	125 W	100 V	20 V	MOSFET (Metal Oxide)	10 V	TO-220ABA	TO-220-3	Through Hole	150 °C	50 A	N-Channel	11 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources