RJK1003DPN-A0 Series

N-Channel MOSFET 100 V, 50 A, 11 MΩ

Catalog

N-Channel MOSFET 100 V, 50 A, 11 MΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK1003DPN-A0#T2	59 nC	125 W	100 V	20 V	MOSFET (Metal Oxide)	10 V	TO-220ABA	TO-220-3	Through Hole	150 °C	50 A	N-Channel	11 mOhm

N-Channel MOSFET 100 V, 50 A, 11 MΩ

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.