L6491D
ActiveIGBT DRIVER, HIGH SIDE AND LOW SIDE, 4A, 10V TO 20V SUPPLY, 85NS/85NS DELAY, SOIC-14
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L6491D
ActiveIGBT DRIVER, HIGH SIDE AND LOW SIDE, 4A, 10V TO 20V SUPPLY, 85NS/85NS DELAY, SOIC-14
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Technical Specifications
Parameters and characteristics for this part
| Specification | L6491D |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 4 A |
| Current - Peak Output (Source, Sink) [custom] | 4 A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.45 V, 2 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 14-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 15 ns |
| Rise / Fall Time (Typ) [custom] | 15 ns |
| Supplier Device Package | 14-SO |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
L6491 Series
The L6491 is a high voltage device manufactured with the BCD6 "OFF-LINE" technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.
The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.
An integrated comparator is available for fast protection against over-current, over-temperature, etc.
Documents
Technical documentation and resources
