Specification	STW88N65M5-4

Current - Continuous Drain (Id) @ 25°C	84 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	204 nC
Input Capacitance (Ciss) (Max) @ Vds	8825 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-4
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	TO-247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STW88N65M5-4 Series

N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Vgs (Max)
STMicroelectronics STW88N65M5-4	8825 pF	10 V	TO-247-4	204 nC	N-Channel	29 mOhm	650 V	450 W	150 °C	5 V	TO-247-4	84 A	MOSFET (Metal Oxide)	Through Hole	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	594	$ 12.94
Newark	Each	1	$ 19.64
		10	$ 17.62
		25	$ 17.18

Description

General part information

STW88N65M5-4 Series

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.