Discrete Semiconductor Products

STU60N55F3

Obsolete

MOSFET N-CH 55V 80A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 80A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU60N55F3

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STU60N55F3	Through Hole	45 nC	175 °C	-55 °C	8.5 mOhm	20 V	55 V	MOSFET (Metal Oxide)	2200 pF	110 W	N-Channel	4 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	IPAK
STMicroelectronics STU60N3LH5	Through Hole		175 °C	-55 °C		20 V	30 V	MOSFET (Metal Oxide)		60 W	N-Channel	3 V	5 V 10 V	IPAK TO-251-3 Short Leads TO-251AA	IPAK	48 A	8.8 nC	1620 pF	8.4 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.98

General part information

N-Channel 55 V 80A (Tc) 110W (Tc) Through Hole IPAK

Technical documentation and resources