Specification	FQI7N60TU

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1430 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	142 W, 3.13 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	I2PAK (TO-262)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQI7N60 Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, 600 V, 7.4 A, 1 Ω, I2PAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
ON Semiconductor FQI7N60TU	38 nC	5 V	MOSFET (Metal Oxide)	7.4 A	600 V	1430 pF	3.13 W 142 W	I2PAK TO-262-3 Long Leads TO-262AA	I2PAK (TO-262)	30 V	-55 °C	150 °C	N-Channel	1 Ohm	10 V	Through Hole
ON Semiconductor FQI7N60TU	38 nC	5 V	MOSFET (Metal Oxide)	7.4 A	600 V	1430 pF	3.13 W 142 W	I2PAK TO-262-3 Long Leads TO-262AA	TO-262 (I2PAK)	30 V	-55 °C	150 °C	N-Channel	1 Ohm	10 V	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.76
Digikey	Bulk	210	$ 1.44
		210	$ 1.44
	Tube	1	$ 3.66
		1	$ 3.66
		10	$ 2.40
		10	$ 2.40
		100	$ 1.68
		100	$ 1.68
		500	$ 1.37
		500	$ 1.37
		1000	$ 1.27
		1000	$ 1.27
		2000	$ 1.24
		2000	$ 1.24
Newark	Each	1000	$ 1.65
		2500	$ 1.34
		5000	$ 1.30
ON Semiconductor	N/A	1	$ 1.32

Description

General part information

FQI7N60 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.