FQI7N60 Series

Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK

Catalog

Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
ON Semiconductor FQI7N60TU	38 nC	5 V	MOSFET (Metal Oxide)	7.4 A	600 V	1430 pF	3.13 W 142 W	I2PAK TO-262-3 Long Leads TO-262AA	I2PAK (TO-262)	30 V	-55 °C	150 °C	N-Channel	1 Ohm	10 V	Through Hole
ON Semiconductor FQI7N60TU	38 nC	5 V	MOSFET (Metal Oxide)	7.4 A	600 V	1430 pF	3.13 W 142 W	I2PAK TO-262-3 Long Leads TO-262AA	TO-262 (I2PAK)	30 V	-55 °C	150 °C	N-Channel	1 Ohm	10 V	Through Hole

Catalog

Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK

Key Features

• 7.4A, 600V, RDS(on)= 1.0Ω(Max.) @VGS= 10 V, ID= 3.7A

• Low gate charge ( Typ. 29nC)

• Low Crss( Typ. 16pF)

• 100% avalanche tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.