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onsemi-MJF47G GP BJT Trans GP BJT NPN 250V 1A 2000mW 3-Pin(3+Tab) TO-220FP Tube
Discrete Semiconductor Products

MJF44H11G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 80 V, 10 A, 36 W, TO-220, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-221D-03-TO-220 3-LEAD FULLPAK+3
onsemi-MJF47G GP BJT Trans GP BJT NPN 250V 1A 2000mW 3-Pin(3+Tab) TO-220FP Tube
Discrete Semiconductor Products

MJF44H11G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 80 V, 10 A, 36 W, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-221D-03-TO-220 3-LEAD FULLPAK+3

Technical Specifications

Parameters and characteristics for this part

SpecificationMJF44H11G
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 hFE
Frequency - Transition50 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]2 W
Supplier Device PackageTO-220FP
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 50$ 1.07
100$ 1.00
250$ 0.96
500$ 0.88
1000$ 0.80
2600$ 0.78
DigikeyTube 1$ 2.76
10$ 1.78
100$ 1.23
500$ 0.99
1000$ 0.91
2000$ 0.85
5000$ 0.81
NewarkEach 100$ 1.04
500$ 0.91
1000$ 0.85
ON SemiconductorN/A 1$ 0.86

Description

General part information

MJF44H11 Series

The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJF44H11 (NPN) and MJF45H11 (PNP) are complementary devices.