MJF44H11 Series

NPN Bipolar Power Transistor

Catalog

NPN Bipolar Power Transistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Power - Max [Max]
ON Semiconductor MJF44H11G	-55 °C	150 °C	Through Hole	40 hFE	1 V	50 MHz	NPN	1 µA	TO-220-3 Full Pack	80 V	TO-220FP	2 W
ON Semiconductor MJF44H11	-55 °C	150 °C	Through Hole	40 hFE	1 V	50 MHz	NPN	1 µA	TO-220-3 Full Pack	80 V	TO-220FP	2 W

Catalog

NPN Bipolar Power Transistor

Key Features

• Low Collector-Emitter Saturation Voltage--VCE(sat)= 1.0 V (Max) @ 8.0 A

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Pb-Free Packages are Available

Description

The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJF44H11 (NPN) and MJF45H11 (PNP) are complementary devices.