Specification	VN2460N8-G

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Rds On (Max) @ Id, Vgs	20 Ohm
Supplier Device Package	TO-243AA (SOT-89)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

VN2460 Series

MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm

Part	Vgs (Max)	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology VN2460N3-G-P014	20 V	TO-226-3 TO-92-3	1 W	600 V	MOSFET (Metal Oxide)	160 mA	N-Channel	4 V	Through Hole	150 pF	4.5 V 10 V	TO-92-3	20 Ohm	-55 °C	150 °C
Microchip Technology VN2460N8-G	20 V	TO-243AA		600 V	MOSFET (Metal Oxide)	200 mA	N-Channel	4 V	Surface Mount	150 pF	4.5 V 10 V	TO-243AA (SOT-89)	20 Ohm	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.54
		25	$ 1.28
		100	$ 1.15
	Digi-Reel®	1	$ 1.54
		25	$ 1.28
		100	$ 1.15
	Tape & Reel (TR)	2000	$ 1.15
Microchip Direct	T/R	1	$ 1.54
		25	$ 1.28
		100	$ 1.15
		1000	$ 0.98
		5000	$ 0.89
		10000	$ 0.81

Description

General part information

VN2460 Series

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Documents

Technical documentation and resources

Datasheet

DMOS Devices for Telecommunications

Application Notes

Understanding MOSFET Data

Application Notes