Discrete Semiconductor Products
BDX53BG
ActiveON Semiconductor
MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR
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Discrete Semiconductor Products
BDX53BG
ActiveON Semiconductor
MEDIUM POWER NPN DARLINGTON BIPOLAR POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BDX53BG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 hFE |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 65 W |
| Supplier Device Package | TO-220 |
| Vce Saturation (Max) @ Ib, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.59 | |
| 10 | $ 1.00 | |||
| 100 | $ 0.67 | |||
| 500 | $ 0.53 | |||
| 1000 | $ 0.48 | |||
| 2000 | $ 0.44 | |||
| 5000 | $ 0.40 | |||
| 10000 | $ 0.38 | |||
| Newark | Each | 1 | $ 1.56 | |
| 10 | $ 0.92 | |||
| 100 | $ 0.85 | |||
| 500 | $ 0.71 | |||
| 1000 | $ 0.65 | |||
| 2500 | $ 0.63 | |||
| 10000 | $ 0.62 | |||
| ON Semiconductor | N/A | 1 | $ 0.40 | |
Description
General part information
BDX53B Series
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
Documents
Technical documentation and resources
