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TO-220-3
Discrete Semiconductor Products

BDX53CG

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 65 W, 8 A, 750 ROHS COMPLIANT: YES

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TO-220-3
Discrete Semiconductor Products

BDX53CG

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 65 W, 8 A, 750 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationBDX53CG
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce750 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]65 W
Supplier Device PackageTO-220
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.54
10$ 0.97
100$ 0.65
500$ 0.51
1000$ 0.46
2000$ 0.43
5000$ 0.39
10000$ 0.36
NewarkEach 1$ 1.52
10$ 0.89
100$ 0.85
500$ 0.67
1000$ 0.67
2500$ 0.63
10000$ 0.59
ON SemiconductorN/A 1$ 0.39

Description

General part information

BDX53B Series

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.