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6-TSOP

Discrete Semiconductor Products

NTGD3133PT1G

Obsolete

ON Semiconductor

POWER MOSFET 20V 2.5A 145 MOHM DUAL P-CHANNEL TSOP6

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DocumentsDatasheet Package Drawing-318G-02-TSOP-6 3.00x1.50x0.90, 0.95P +1

6-TSOP

Discrete Semiconductor Products

NTGD3133PT1G

Obsolete

ON Semiconductor

POWER MOSFET 20V 2.5A 145 MOHM DUAL P-CHANNEL TSOP6

Deep-Dive with AI

DocumentsDatasheet Package Drawing-318G-02-TSOP-6 3.00x1.50x0.90, 0.95P +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTGD3133PT1G

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	5.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	560 mW
Rds On (Max) @ Id, Vgs	145 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTGD3133P Series

-20 V, -2.5 A, P-Channel with Schottky Barrier Diode, TSOP-6

Documents

Technical documentation and resources

Datasheet

Package Drawing-318G-02-TSOP-6 3.00x1.50x0.90, 0.95P

Package Drawing

Datasheet

NTGD3133P Series

Power MOSFET, -20V -2.5A P-Ch with Schottky Barrier Diode, TSOP-6

Part	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NTGD3147FT1G	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	2.2 A	6-TSOP	P-Channel	5.5 nC	Schottky Diode (Isolated)	2.5 V 4.5 V	Surface Mount	12 V	1 W	145 mOhm	20 V	-25 °C	150 °C	1.5 V	400 pF
ON Semiconductor NTGD3133PT1G	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	1.6 A	6-TSOP			Logic Level Gate		Surface Mount			145 mOhm	20 V	-55 °C	150 °C	1.4 V		2 P-Channel	560 mW	5.5 nC	400 pF