Power MOSFET, -20V -2.5A P-Ch with Schottky Barrier Diode, TSOP-6
Power MOSFET, -20V -2.5A P-Ch with Schottky Barrier Diode, TSOP-6
Power MOSFET, -20V -2.5A P-Ch with Schottky Barrier Diode, TSOP-6
| Part | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Feature | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | MOSFET (Metal Oxide) | SOT-23-6 Thin TSOT-23-6 | 2.2 A | 6-TSOP | P-Channel | 5.5 nC | Schottky Diode (Isolated) | 2.5 V 4.5 V | Surface Mount | 12 V | 1 W | 145 mOhm | 20 V | -25 °C | 150 °C | 1.5 V | 400 pF | ||||
ON Semiconductor | MOSFET (Metal Oxide) | SOT-23-6 Thin TSOT-23-6 | 1.6 A | 6-TSOP | Logic Level Gate | Surface Mount | 145 mOhm | 20 V | -55 °C | 150 °C | 1.4 V | 2 P-Channel | 560 mW | 5.5 nC | 400 pF |