Specification	MSCDC150KK120D1PAG

Current - Average Rectified (Io) (per Diode)	150 A
Current - Reverse Leakage @ Vr	600 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	D1P
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

MSCDC150KK170D1PAG-Module Series

1200V, 150A, D1P Dual Common Cathode mSiC™ Diode Module

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Speed	Supplier Device Package	Mounting Type	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Technology	Diode Configuration
Microchip Technology MSCDC150KK170D1PAG	1700 V	-40 °C	175 ░C	1.8 V	Module	No Recovery Time	D1P	Chassis Mount	150 A	600 µA	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode
Microchip Technology MSCDC150KK120D1PAG	1.2 kV	-40 °C	175 ░C	1.8 V	Module	No Recovery Time	D1P	Chassis Mount	150 A	600 µA	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode
Microchip Technology MSCDC150A120D1PAG	1.2 kV	-40 °C	175 ░C	1.8 V	Module	No Recovery Time	D1P	Chassis Mount	150 A	600 µA	SiC (Silicon Carbide) Schottky	1 Pair Series Connection
Microchip Technology MSCDC150KK70D1PAG	700 V	-40 °C	175 ░C	1.8 V	Module	No Recovery Time	D1P	Chassis Mount	150 A	600 µA	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* SiC Schottky Diode

* Zero reverse recovery

* Zero forward recovery

Technical documentation and resources