Discrete Semiconductor Products

FQI4N90TU

Obsolete

POWER FIELD-EFFECT TRANSISTOR, 4

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

POWER FIELD-EFFECT TRANSISTOR, 4

Technical Specifications

Parameters and characteristics for this part

Specification	FQI4N90TU

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	140 W
Power Dissipation (Max)	3.13 W
Rds On (Max) @ Id, Vgs [Max]	3.3 Ohm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Technology
ON Semiconductor FQI4N90TU	4.2 A	1100 pF	3.3 Ohm	10 V	-55 °C	150 °C	30 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	30 nC	5 V	140 W	3.13 W	TO-262 (I2PAK)	N-Channel	900 V	MOSFET (Metal Oxide)
ON Semiconductor FQI4N90TU	4.2 A	1100 pF	3.3 Ohm	10 V	-55 °C	150 °C	30 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	30 nC	5 V	140 W	3.13 W	I2PAK (TO-262)	N-Channel	900 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Through Hole TO-262 (I2PAK)

Technical documentation and resources

No documents available