FQI4N90 Series

Catalog

POWER FIELD-EFFECT TRANSISTOR, 4

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Technology
ON Semiconductor FQI4N90TU	4.2 A	1100 pF	3.3 Ohm	10 V	-55 °C	150 °C	30 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	30 nC	5 V	140 W	3.13 W	TO-262 (I2PAK)	N-Channel	900 V	MOSFET (Metal Oxide)
ON Semiconductor FQI4N90TU	4.2 A	1100 pF	3.3 Ohm	10 V	-55 °C	150 °C	30 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	30 nC	5 V	140 W	3.13 W	I2PAK (TO-262)	N-Channel	900 V	MOSFET (Metal Oxide)