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MJD32CTF-ON
Discrete Semiconductor Products

FGB20N60SF

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ON Semiconductor

IGBT, 600V, 20A, 2.2V, TO-247<BR>HIGH SPEED FIELD STOP

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MJD32CTF-ON
Discrete Semiconductor Products

FGB20N60SF

Active
ON Semiconductor

IGBT, 600V, 20A, 2.2V, TO-247<BR>HIGH SPEED FIELD STOP

Technical Specifications

Parameters and characteristics for this part

SpecificationFGB20N60SF
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)60 A
Gate Charge65 nC
IGBT TypeField Stop
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]208 W
Supplier Device PackageTO-263 (D2PAK)
Switching Energy370 µJ, 160 µJ
Td (on/off) @ 25°C90 ns
Td (on/off) @ 25°C13 ns
Test Condition20 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 167$ 1.80
167$ 1.80

Description

General part information

FGB20N60SF Series

Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.